ROHM Semiconductor RX3G07BBGC16

包装/外壳

TO-220AB-3

Channel Mode

Enhancement

Id - Continuous Drain Current

130 A

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Pd - Power Dissipation

89 W

Qg - Gate Charge

56 nC

Rds On - Drain-Source Resistance

4.4 mOhms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

40 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

技术

Si

通道数量

1 Channel