ROHM Semiconductor RX3G18BBGC16

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220AB

Package

Tube

Base Product Number

RX3G18

Current - Continuous Drain (Id) @ 25℃

270A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

192W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

192 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

210 nC

Rds On - Drain-Source Resistance

2 mOhms

Id - Continuous Drain Current

270 A

操作温度

150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.47mOhm @ 90A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

13200 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

210 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

场效应管特性

-