Rohm Semiconductor RX3L07BGNC16

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220AB

厂商

Rohm Semiconductor

Package

Cut Tape (CT)

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

70A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

96W (Ta)

Qualification

-

Continuous Drain Current Id

70A

Number of Elements per Chip

1

Package Type

TO-220AB

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

17 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

96 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

55 nC

Rds On - Drain-Source Resistance

7.2 mOhms

RoHS

Details

Typical Turn-Off Delay Time

71 ns

Id - Continuous Drain Current

70 A

系列

-

操作温度

150°C (TJ)

包装

Tube

子类别

MOSFETs

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

96W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7.2mOhm @ 70A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 50μA

输入电容(Ciss)(Max)@Vds

2600 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

55 nC @ 10 V

上升时间

32 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

功率MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET