ROHM Semiconductor RX3P07BBHC16

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220AB

Package

Tube

Base Product Number

RX3P07

Current - Continuous Drain (Id) @ 25℃

80A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

89W (Ta)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

89 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

38 nC

Rds On - Drain-Source Resistance

8.4 mOhms

Id - Continuous Drain Current

80 A

操作温度

150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.4mOhm @ 70A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

2410 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

38 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

场效应管特性

-