Rohm Semiconductor RXH100N03TB1
- 收藏
- 对比
RXH100N03TB1
2078-RXH100N03TB1
晶体管 - FET,MOSFET - 单个
8-SOIC (0.154", 3.90mm Width)
大陆
立即发货

4V DRIVE NCH MOSFET: MOSFETS ARE
--最小包装量--
RXH100N03TB1详情
Rohm Semiconductor RXH100N03TB1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-SOIC (0.154", 3.90mm Width)
供应商器件包装
8-SOP
厂商
Rohm Semiconductor
Product Status
活跃
Package
Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Current - Continuous Drain (Id) @ 25℃
10A (Ta)
Power Dissipation (Max)
2W (Ta)
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-On Delay Time
10 ns
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
2 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Factory Pack QuantityFactory Pack Quantity
2500
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
ROHM 半导体
Brand
ROHM 半导体
Qg - Gate Charge
11 nC
Rds On - Drain-Source Resistance
13 mOhms
RoHS
Details
Typical Turn-Off Delay Time
50 ns
Id - Continuous Drain Current
10 A
系列
-
操作温度
150°C
包装
MouseReel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
13mOhm @ 10A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 1mA
输入电容(Ciss)(Max)@Vds
800 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
11 nC @ 5 V
上升时间
45 ns
漏源电压 (Vdss)
30 V
Vgs(最大值)
±20V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET
RXH100N03TB1拓展信息
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor







哦! 它是空的。