Rohm Semiconductor SCT2280KEGC11

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247N

厂商

Rohm Semiconductor

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Power Dissipation (Max)

108W (Tc)

Continuous Drain Current Id

14A

Number of Elements per Chip

1

Package Type

TO-247N

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

19 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

108 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 6 V, + 22 V

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Forward Transconductance - Min

1.4 S

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

36 nC

Rds On - Drain-Source Resistance

364 mOhms

RoHS

Details

Typical Turn-Off Delay Time

47 ns

Id - Continuous Drain Current

14 A

系列

-

操作温度

175°C

包装

Tube

子类别

MOSFETs

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

108W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

364mOhm @ 4A, 18V

不同 Id 时 Vgs(th)（最大值）

4V @ 1.4mA

输入电容(Ciss)(Max)@Vds

667 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

36 nC @ 18 V

上升时间

19 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+22V, -6V

产品类别

MOSFET

晶体管类型

功率MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET