Rohm Semiconductor SCT2450KEHRC11

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247N

厂商

Rohm Semiconductor

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Power Dissipation (Max)

85W (Tc)

Continuous Drain Current Id

10A

Number of Elements per Chip

1

Package Type

TO-247N

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

19 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

85 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 6 V, + 22 V

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Forward Transconductance - Min

1 S

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

27 nC

Rds On - Drain-Source Resistance

585 mOhms

RoHS

Details

Typical Turn-Off Delay Time

38 ns

Id - Continuous Drain Current

10 A

系列

Automotive, AEC-Q101

操作温度

175°C (TJ)

包装

Tube

子类别

MOSFETs

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

85W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

585mOhm @ 3A, 18V

不同 Id 时 Vgs(th)（最大值）

4V @ 900μA

输入电容(Ciss)(Max)@Vds

463 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

27 nC @ 18 V

上升时间

17 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+22V, -6V

产品类别

MOSFET

晶体管类型

汽车功率MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET