ROHM Semiconductor SCT3040KRC15

安装类型

通孔

包装/外壳

TO-247-4

供应商器件包装

TO-247-4L

Package

Tube

Base Product Number

SCT3040

Current - Continuous Drain (Id) @ 25℃

55A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

18V

厂商

Rohm Semiconductor

Power Dissipation (Max)

262W

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5.6V @ 10mA

Id - Continuous Drain Current

55 A

Rds On - Drain-Source Resistance

40 mOhms

Qg - Gate Charge

107 nC

Channel Mode

Enhancement

Mounting Styles

通孔

Vgs - Gate-Source Voltage

- 4 V, + 22 V

Maximum Operating Temperature

+ 175 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

262 W

Vgs th - Gate-Source Threshold Voltage

5.6 V

Vds - Drain-Source Breakdown Voltage

1.2 kV

操作温度

175°C (TJ)

系列

-

技术

SiC (Silicon Carbide Junction Transistor)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

52mOhm @ 20A, 18V

输入电容(Ciss)(Max)@Vds

1337 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

107 nC @ 18 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+22V, -4V

场效应管特性

-