ROHM Semiconductor SCT3060AW7TL

安装类型

表面贴装

包装/外壳

TO-263-7

供应商器件包装

TO-263-7

Number of Elements per Chip

1

Package Type

TO-263-7

MSL

MSL 1 - Unlimited

Continuous Drain Current Id

38A

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

5 ns

Vgs th - Gate-Source Threshold Voltage

5.6 V

Pd - Power Dissipation

159 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 4 V, + 22 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

4.9 S

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

58 nC

Rds On - Drain-Source Resistance

78 mOhms

RoHS

Details

Typical Turn-Off Delay Time

17 ns

Id - Continuous Drain Current

38 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

SCT3060

Current - Continuous Drain (Id) @ 25℃

38A (Tc)

厂商

Rohm Semiconductor

Power Dissipation (Max)

159W

Product Status

活跃

系列

SCT

包装

切割胶带

操作温度

175°C (TJ)

子类别

MOSFETs

技术

SiC

引脚数量

7

通道数量

1 Channel

功率耗散

159W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

78mOhm @ 13A, 18V

不同 Id 时 Vgs(th)（最大值）

5.6V @ 6.67mA

输入电容(Ciss)(Max)@Vds

852 pF @ 500 V

门极电荷(Qg)(最大)@Vgs

58 nC @ 18 V

上升时间

14 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

+22V, -4V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET