ROHM Semiconductor SCT3080ARC15

安装类型

通孔

包装/外壳

TO-247-4

供应商器件包装

TO-247-4L

Base Product Number

SCT3080

Channel Mode

Enhancement

Current - Continuous Drain (Id) @ 25℃

30A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

18V

Id - Continuous Drain Current

30 A

厂商

Rohm Semiconductor

Mounting Styles

通孔

Package

Tube

Pd - Power Dissipation

134 W

Power Dissipation (Max)

134W

Product Status

活跃

Qg - Gate Charge

48 nC

Rds On - Drain-Source Resistance

80 mOhms

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Vgs - Gate-Source Voltage

- 4 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

5.6 V

操作温度

175°C (TJ)

系列

-

技术

SiC (Silicon Carbide Junction Transistor)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

104mOhm @ 10A, 18V

不同 Id 时 Vgs(th)（最大值）

5.6V @ 5mA

输入电容(Ciss)(Max)@Vds

571 pF @ 500 V

门极电荷(Qg)(最大)@Vgs

48 nC @ 18 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

+22V, -4V

场效应管特性

-