ROHM Semiconductor SCT3160KW7TL

安装类型

表面贴装

包装/外壳

TO-263-7

供应商器件包装

TO-263-7

Continuous Drain Current Id

17

MSL

MSL 1 - Unlimited

Number of Elements per Chip

1

Package Type

TO-263-7

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

3 ns

Vgs th - Gate-Source Threshold Voltage

5.6 V

Pd - Power Dissipation

100 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 4 V, + 22 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

2.5 S

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

42 nC

Rds On - Drain-Source Resistance

208 mOhms

RoHS

Details

Typical Turn-Off Delay Time

14 ns

Id - Continuous Drain Current

17 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

SCT3160

Current - Continuous Drain (Id) @ 25℃

17A (Tc)

厂商

Rohm Semiconductor

Power Dissipation (Max)

100W

Product Status

活跃

系列

SCT

包装

切割胶带

操作温度

175°C (TJ)

子类别

MOSFETs

技术

SiC

引脚数量

7

通道数量

1 Channel

功率耗散

100

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

208mOhm @ 5A, 18V

不同 Id 时 Vgs(th)（最大值）

5.6V @ 2.5mA

输入电容(Ciss)(Max)@Vds

398 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

42 nC @ 18 V

上升时间

9 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+22V, -4V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET