Rohm Semiconductor SCT4013DRC15
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SCT4013DRC15
2078-SCT4013DRC15
晶体管 - FET,MOSFET - 单个
TO-247-4
大陆
立即发货

750V, 13M, 4-PIN THD, TRENCH-STR
--最小包装量--
SCT4013DRC15详情
Rohm Semiconductor SCT4013DRC15重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-4
供应商器件包装
TO-247-4L
厂商
Rohm Semiconductor
Package
Tube
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Power Dissipation (Max)
312W
Base Product Number
SCT4013
MSL
-
Continuous Drain Current Id
105A
Id - Continuous Drain Current
105 A
Typical Turn-Off Delay Time
82 ns
RoHS
Details
Rds On - Drain-Source Resistance
13 mOhms
Qg - Gate Charge
170 nC
Brand
ROHM 半导体
Manufacturer
ROHM 半导体
Channel Mode
Enhancement
Mounting Styles
通孔
Factory Pack QuantityFactory Pack Quantity
450
Vgs - Gate-Source Voltage
- 4 V, + 21 V
Maximum Operating Temperature
+ 175 C
Transistor Polarity
N-Channel
Pd - Power Dissipation
312 W
Vgs th - Gate-Source Threshold Voltage
4.8 V
Typical Turn-On Delay Time
17 ns
Vds - Drain-Source Breakdown Voltage
750 V
系列
-
操作温度
175°C (TJ)
包装
Tube
子类别
MOSFETs
通道数量
1 Channel
功率耗散
312W
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
16.9mOhm @ 58A, 18V
不同 Id 时 Vgs(th)(最大值)
4.8V @ 30.8mA
输入电容(Ciss)(Max)@Vds
4580 pF @ 500 V
门极电荷(Qg)(最大)@Vgs
170 nC @ 18 V
上升时间
32 ns
漏源电压 (Vdss)
750 V
Vgs(最大值)
+21V, -4V
产品类别
MOSFET
晶体管类型
1 N-Channel
信道型
N通道
场效应管特性
-
产品类别
MOSFET
SCT4013DRC15拓展信息
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
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