ROHM Semiconductor SCT4018KEC11

包装/外壳

TO-247N-3

安装类型

通孔

供应商器件包装

TO-247N

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

81 A

Rds On - Drain-Source Resistance

23.4 mOhms

Vgs - Gate-Source Voltage

- 4 V, + 21 V

Vgs th - Gate-Source Threshold Voltage

4.8 V

Qg - Gate Charge

170 nC

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

312 W

Channel Mode

Enhancement

Fall Time

14 ns

Forward Transconductance - Min

22 S

Factory Pack QuantityFactory Pack Quantity

450

Typical Turn-Off Delay Time

50 ns

Typical Turn-On Delay Time

15 ns

Package

Tube

Current - Continuous Drain (Id) @ 25℃

81A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

18V

厂商

Rohm Semiconductor

Power Dissipation (Max)

312W

Product Status

活跃

MSL

-

Continuous Drain Current Id

81A

包装

Tube

操作温度

175°C (TJ)

系列

-

配置

Single

通道数量

1 Channel

功率耗散

312W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

23.4mOhm @ 42A, 18V

不同 Id 时 Vgs(th)（最大值）

4.8V @ 22.2mA

输入电容(Ciss)(Max)@Vds

4532 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

170 nC @ 18 V

上升时间

43 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+21V, -4V

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-