Rohm Semiconductor SH8KA4TB1
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SH8KA4TB1
2078-SH8KA4TB1
晶体管 - FET,MOSFET - 阵列
8-SOIC (0.154", 3.90mm Width)
大陆
立即发货

MOSFET2 N-CH SOP8G
--最小包装量--
SH8KA4TB1详情
Rohm Semiconductor SH8KA4TB1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-SOIC (0.154", 3.90mm Width)
供应商器件包装
8-SOP
厂商
Rohm Semiconductor
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
9A (Ta)
Base Product Number
SH8KA4
MSL
MSL 1 - Unlimited
Qualification
-
Transistor Polarity
N通道
Continuous Drain Current Id
9A
Package Type
SOP
Vds - Drain-Source Breakdown Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Pd - Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
15.5 nC
Rds On - Drain-Source Resistance
21.4 mOhms
Id - Continuous Drain Current
9 A
系列
Automotive, AEC-Q101
操作温度
150°C (TJ)
技术
Si
引脚数量
8
通道数量
2 Channel
功率 - 最大
2W (Ta)
场效应管类型
2 N-Channel (Dual)
Rds On(Max)@Id,Vgs
21.4mOhm @ 9A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 1mA
输入电容(Ciss)(Max)@Vds
640pF @ 15V
门极电荷(Qg)(最大)@Vgs
15.5nC @ 10V
漏源电压 (Vdss)
30V
信道型
N通道
场效应管特性
Standard
SH8KA4TB1拓展信息
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