Rohm Semiconductor SH8KC6TB1

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SOP

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

6.5A (Ta)

MSL

MSL 1 - Unlimited

Qualification

-

Transistor Polarity

N通道

Continuous Drain Current Id

6.5A

Number of Elements per Chip

2

Package Type

SOP

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

8.7 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

7.6 nC

Rds On - Drain-Source Resistance

32 mOhms

RoHS

Details

Typical Turn-Off Delay Time

21 ns

Id - Continuous Drain Current

6.5 A

系列

-

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

技术

Si

引脚数量

8

配置

Dual

通道数量

2 Channel

功率 - 最大

2W (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

32mOhm @ 6.5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

460pF @ 30V

门极电荷(Qg)(最大)@Vgs

7.6nC @ 10V

上升时间

5.7 ns

漏源电压 (Vdss)

60V

产品类别

MOSFET

信道型

N通道

场效应管特性

Standard

产品类别

MOSFET