Rohm Semiconductor SH8KE6TB1

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SOP

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

4.5A (Ta)

Package Type

SOP8

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

6.7 nC

Rds On - Drain-Source Resistance

58 mOhms

Id - Continuous Drain Current

4.5 A

系列

-

操作温度

150°C (TJ)

技术

Si

通道数量

2 Channel

功率 - 最大

1.4W (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

58mOhm @ 4.5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

305pF @ 50V

门极电荷(Qg)(最大)@Vgs

6.7nC @ 10V

漏源电压 (Vdss)

100V

信道型

N

场效应管特性

Standard