Rohm Semiconductor SP8K2HZGTB

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SOP

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

6A (Ta)

Package Type

SOP

Qualification

AEC-Q101

Transistor Polarity

N通道

Continuous Drain Current Id

6A

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

7.2 nC

Rds On - Drain-Source Resistance

33 mOhms

RoHS

Details

Typical Turn-Off Delay Time

36 ns

Id - Continuous Drain Current

6 A

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

技术

Si

引脚数量

8

通道数量

2 Channel

功率 - 最大

1.4W (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

30mOhm @ 6A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

520pF @ 10V

门极电荷(Qg)(最大)@Vgs

10.1nC @ 5V

上升时间

21 ns

漏源电压 (Vdss)

30V

产品类别

MOSFET

晶体管类型

2 N-Channel

信道型

N

场效应管特性

Standard

产品类别

MOSFET