ROHM Semiconductor SP8K33HZGTB

安装类型

表面贴装

包装/外壳

SOP-8

供应商器件包装

8-SOP

Number of Elements per Chip

2

Package Type

SOP

Channel Mode

Enhancement

MSL

-

Qualification

AEC-Q101

Transistor Polarity

N通道

Continuous Drain Current Id

5A

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

12 nC

Rds On - Drain-Source Resistance

48 mOhms

RoHS

Details

Typical Turn-Off Delay Time

40 ns

Id - Continuous Drain Current

5 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

5A (Ta)

厂商

Rohm Semiconductor

Product Status

活跃

系列

SP8K33

包装

切割胶带

操作温度

150°C (TJ)

子类别

MOSFETs

技术

Si

引脚数量

8

配置

Dual

通道数量

2 Channel

功率 - 最大

2W (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

48mOhm @ 5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

620pF @ 10V

门极电荷(Qg)(最大)@Vgs

12nC @ 5V

上升时间

20 ns

漏源电压 (Vdss)

60V

产品类别

MOSFET

晶体管类型

2 N-Channel

信道型

Dual N

场效应管特性

Standard

产品类别

MOSFET