Rohm Semiconductor SP8M31HZGTB

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SOP

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

4.5A (Ta)

Id - Continuous Drain Current

4.5 A

Typical Turn-Off Delay Time

40 ns

RoHS

Details

Rds On - Drain-Source Resistance

65 mOhms

Qg - Gate Charge

7 nC

Brand

ROHM 半导体

Manufacturer

ROHM 半导体

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

2500

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel, P-Channel

Pd - Power Dissipation

2 W

Qualification

AEC-Q101

Vgs th - Gate-Source Threshold Voltage

3 V

Typical Turn-On Delay Time

12 ns

Vds - Drain-Source Breakdown Voltage

60 V

系列

-

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

技术

Si

配置

Dual

通道数量

2 Channel

功率 - 最大

2W (Ta)

场效应管类型

N and P-Channel

Rds On(Max)@Id,Vgs

65mOhm @ 4.5A, 10V, 70mOhm @ 4.5A, 10V

不同 Id 时 Vgs(th)（最大值）

3V @ 1mA

输入电容(Ciss)(Max)@Vds

500pF @ 10V, 2500pF @ 10V

门极电荷(Qg)(最大)@Vgs

7nC @ 5V, 40nC @ 10V

上升时间

18 ns

漏源电压 (Vdss)

60V

产品类别

MOSFET

晶体管类型

1 N-Channel, 1 P-Channel

场效应管特性

Standard

产品类别

MOSFET