Rohm Semiconductor SP8M3HZGTB

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SOP

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

5A (Ta), 4.5A (Ta)

Number of Elements per Chip

1

Package Type

SOP

Channel Mode

Enhancement

MSL

-

Qualification

AEC-Q101

Transistor Polarity

N and P Channel

Continuous Drain Current Id

5A

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Qg - Gate Charge

3.9 nC

Rds On - Drain-Source Resistance

51 mOhms

Id - Continuous Drain Current

5 A, 4.5 A

系列

-

操作温度

150°C (TJ)

技术

Si

引脚数量

8

通道数量

2 Channel

功率 - 最大

2W (Ta)

场效应管类型

N and P-Channel

Rds On(Max)@Id,Vgs

51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

230pF @ 10V, 850pF @ 10V

门极电荷(Qg)(最大)@Vgs

3.9nC @ 5V, 8.5nC @ 5V

漏源电压 (Vdss)

30V

信道型

N, P

场效应管特性

Standard