Rohm Semiconductor SP8M4HZGTB

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SOP

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

9A (Ta), 7A (Ta)

Number of Elements per Chip

2

Package Type

SOP

Channel Mode

Enhancement

MSL

-

Qualification

AEC-Q101

Transistor Polarity

N and P Channel

Continuous Drain Current Id

9A

Id - Continuous Drain Current

9 A, 7 A

Typical Turn-Off Delay Time

55 ns

RoHS

Details

Rds On - Drain-Source Resistance

18 mOhms

Qg - Gate Charge

15 nC

Brand

ROHM 半导体

Manufacturer

ROHM 半导体

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

2500

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

2 W

Vgs th - Gate-Source Threshold Voltage

2.5 V

Typical Turn-On Delay Time

10 ns

Vds - Drain-Source Breakdown Voltage

30 V

系列

-

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

技术

Si

引脚数量

8

配置

Dual

通道数量

2 Channel

功率 - 最大

1.4W (Ta)

场效应管类型

N and P-Channel

Rds On(Max)@Id,Vgs

18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

1190pF @ 10V, 2600pF @ 10V

门极电荷(Qg)(最大)@Vgs

15nC @ 5V, 25nC @ 5V

上升时间

15 ns

漏源电压 (Vdss)

30V

产品类别

MOSFET

晶体管类型

1 N-Channel, 1 P-Channel

信道型

N, P

场效应管特性

Standard

产品类别

MOSFET