Rohm Semiconductor UT6J3TCR1

安装类型

表面贴装

包装/外壳

8-PowerUDFN

供应商器件包装

DFN2020-8D

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

3A (Ta)

MSL

MSL 1 - Unlimited

Qualification

-

Transistor Polarity

P Channel

Continuous Drain Current Id

3A

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

10 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, 0 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

8.5 nC

Rds On - Drain-Source Resistance

85 mOhms

RoHS

Details

Typical Turn-Off Delay Time

120 ns

Id - Continuous Drain Current

2 A

操作温度

150°C (TJ)

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Dual

通道数量

2 Channel

功率 - 最大

2W (Ta)

场效应管类型

2 P-Channel (Dual)

Rds On(Max)@Id,Vgs

85mOhm @ 3A, 4.5V

不同 Id 时 Vgs(th)（最大值）

1V @ 1mA

输入电容(Ciss)(Max)@Vds

2000pF @ 10V

门极电荷(Qg)(最大)@Vgs

8.5nC @ 4.5V

上升时间

30 ns

漏源电压 (Vdss)

20V

产品类别

MOSFET

信道型

P Channel

场效应管特性

Standard

产品类别

MOSFET