ROHM Semiconductor UT6JB5TCR
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UT6JB5TCR
2078-UT6JB5TCR
晶体管 - FET,MOSFET - 阵列
DFN2020-8D
大陆
立即发货

Dual P-Channel MOSFET, 3.5 A, 40 V, 8-Pin DFN2020
--最小包装量--
UT6JB5TCR详情
ROHM Semiconductor UT6JB5TCR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
DFN2020-8D
供应商器件包装
HUML2020L8
1st Contact Gender
Female
Package
Bag
Overall Impedance
50 Ohms
Base Product Number
Q-0305E0
厂商
Amphenol Custom Cable
Product Status
活跃
2nd Contact Gender
Female
Frequency-Max
3 GHz
Cable Types
RG-316
Number of Elements per Chip
2
Package Type
DFN2020
Qualification
-
Transistor Polarity
P Channel
Continuous Drain Current Id
3.5A
Vds - Drain-Source Breakdown Voltage
40 V
Typical Turn-On Delay Time
7.4 ns
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 10 V, + 10 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
ROHM 半导体
Brand
ROHM 半导体
Qg - Gate Charge
6.2 nC
Rds On - Drain-Source Resistance
122 mOhms
RoHS
Details
Typical Turn-Off Delay Time
42 ns
Id - Continuous Drain Current
3.5 A
Current - Continuous Drain (Id) @ 25℃
3.5A (Ta)
操作温度
-
系列
-
包装
MouseReel
颜色
Copper
子类别
MOSFETs
技术
Si
入口保护
-
样式
BNC to Fakra
引脚数量
8
配置
Dual
通道数量
2 Channel
功率 - 最大
2W (Ta)
场效应管类型
2 P-Channel (Dual)
Rds On(Max)@Id,Vgs
122mOhm @ 3.5A, 10V
不同 Id 时 Vgs(th)(最大值)
2.5V @ 1mA
输入电容(Ciss)(Max)@Vds
265pF @ 20V
门极电荷(Qg)(最大)@Vgs
6.2nC @ 10V
上升时间
8.5 ns
漏源电压 (Vdss)
40V
产品类别
MOSFET
晶体管类型
2 P - Channel
第一个连接器
BNC Jack
第二个连接器
Fakra Jack
信道型
P
场效应管特性
Standard
特征
Shielded
产品类别
MOSFET
长度
36.00 (914.40mm)
UT6JB5TCR拓展信息
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