Rohm Semiconductor UT6K3TCR1

安装类型

表面贴装

包装/外壳

8-PowerUDFN

供应商器件包装

HUML2020L8

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

5.5A (Ta)

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

7.2 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

4 nC

Rds On - Drain-Source Resistance

42 mOhms

RoHS

Details

Typical Turn-Off Delay Time

13 ns

Id - Continuous Drain Current

5.5 A

操作温度

150°C (TJ)

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Dual

通道数量

2 Channel

功率 - 最大

2W (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

42mOhm @ 5A, 4.5V

不同 Id 时 Vgs(th)（最大值）

1.5V @ 1mA

输入电容(Ciss)(Max)@Vds

450pF @ 15V

门极电荷(Qg)(最大)@Vgs

4nC @ 4.5V

上升时间

5.8 ns

漏源电压 (Vdss)

30V

产品类别

MOSFET

场效应管特性

Standard

产品类别

MOSFET