Rohm Semiconductor UT6KC5TCR

安装类型

表面贴装

包装/外壳

8-PowerUDFN

供应商器件包装

DFN2020-8D

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

3.5A (Ta)

MSL

-

Qualification

-

Transistor Polarity

N通道

Continuous Drain Current Id

3.5A

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

3.1 nC

Rds On - Drain-Source Resistance

95 mOhms

Id - Continuous Drain Current

3.5 A

系列

-

操作温度

150°C (TJ)

技术

Si

通道数量

2 Channel

功率 - 最大

2W (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

95mOhm @ 3.5A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

135pF @ 30V

门极电荷(Qg)(最大)@Vgs

3.1nC @ 10V

漏源电压 (Vdss)

60V

信道型

N通道

场效应管特性

Standard