Wuxi China Resources Huajing Microelectronics CS4N65A3HD1-G

RoHS

true

Drain Source Voltage (Vdss)

650V

Drain Source On Resistance (RDS(on)@Vgs,Id)

2Ω@10V,2A

Power Dissipation (Pd)

75W

Gate Threshold Voltage (Vgs(th)@Id)

4V@250uA

Reverse Transfer Capacitance (Crss@Vds)

8.5pF@25V

Input Capacitance (Ciss@Vds)

544pF@25V

Total Gate Charge (Qg@Vgs)

14.5nC@10V

Package

Tube-packed

类型

1 N-Channel

Continuous Drain Current (Id)

4A