Microchip APT10045B2FLLG

安装类型

通孔

包装/外壳

TO-247-3 Variant

供应商器件包装

T-MAX™ [B2]

Package

Tube

Base Product Number

APT10045

Current - Continuous Drain (Id) @ 25℃

23A (Tc)

厂商

微芯片技术

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1000 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

565 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Manufacturer

Microchip

Brand

微芯片技术

Rds On - Drain-Source Resistance

460 mOhms

Typical Turn-Off Delay Time

30 ns

Id - Continuous Drain Current

23 A

系列

POWER MOS 7®

包装

Tube

类型

MOSFET

子类别

Discrete Semiconductor Modules

技术

MOSFET (Metal Oxide)

工作电源电压

670 V

配置

Single

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

460mOhm @ 11.5A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 2.5mA

输入电容(Ciss)(Max)@Vds

4350 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

154 nC @ 10 V

上升时间

5 ns

漏源电压 (Vdss)

1000 V

产品类别

Discrete Semiconductor Modules

场效应管特性

-

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules