Microchip APT10M11LVRG

包装/外壳

TO-264-3

安装类型

通孔

表面安装

NO

供应商器件包装

TO-264 (L)

终端数量

3

晶体管元件材料

SILICON

Manufacturer Part Number

AH5362GYM

Manufacturer

Arrow Hart - Cooper Wiring Devices

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

16 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

520 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Brand

Microchip Technology / Atmel

Rds On - Drain-Source Resistance

11 mOhms

RoHS

Details

Typical Turn-Off Delay Time

46 ns

Id - Continuous Drain Current

100 A

Package

Tube

Base Product Number

APT10M11

Current - Continuous Drain (Id) @ 25℃

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

520W (Tc)

Product Status

活跃

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Operating Temperature-Max

150 °C

Package Shape

RECTANGULAR

Drain Current-Max (ID)

100 A

Risk Rank

5.65

Ihs Manufacturer

MICROSEMI CORP

Part Life Cycle Code

活跃

Number of Elements

1

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS V®

类型

功率 MOS V

子类别

Discrete Semiconductor Modules

技术

Si

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

compliant

JESD-30代码

R-PSFM-T3

配置

Single

操作模式

增强型MOSFET

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

11mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 2.5mA

输入电容(Ciss)(Max)@Vds

10300 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

450 nC @ 10 V

上升时间

33 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±30V

极性/通道类型

N-CHANNEL

产品类别

Discrete Semiconductor Modules

JEDEC-95代码

TO-264AA

漏极-源极导通最大电阻

0.011 Ω

脉冲漏极电流-最大值(IDM)

400 A

DS 击穿电压-最小值

100 V

雪崩能量等级（Eas）

2500 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

场效应管特性

-

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules