Microchip APT29F100L

安装类型

通孔

包装/外壳

TO-264-3, TO-264AA

供应商器件包装

TO-264

Package

Tube

Base Product Number

APT29F100

Current - Continuous Drain (Id) @ 25℃

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

1040W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

1 kV

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

1.04 kW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

260 nC

Rds On - Drain-Source Resistance

370 mOhms

Id - Continuous Drain Current

30 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

460mOhm @ 16A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 2.5mA

输入电容(Ciss)(Max)@Vds

8500 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

260 nC @ 10 V

漏源电压 (Vdss)

1000 V

Vgs（最大值）

±30V

场效应管特性

-