APT40N60JCU3详情
Microchip APT40N60JCU3重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
底座安装
包装/外壳
SOT-227-4, miniBLOC
供应商器件包装
SOT-227
质量
7.71107 kg
Continuous Drain Current Id
40
Package
Bulk
Base Product Number
APT40N60
Current - Continuous Drain (Id) @ 25℃
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
微芯片技术
Power Dissipation (Max)
290W (Tc)
Product Status
活跃
Vds - Drain-Source Breakdown Voltage
600 V
Typical Turn-On Delay Time
20 ns
Vgs th - Gate-Source Threshold Voltage
2.1 V
Pd - Power Dissipation
290 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
20 V
Unit Weight
1.058219 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Id - Continuous Drain Current
40 A
Typical Turn-Off Delay Time
115 ns
RoHS
Details
Rds On - Drain-Source Resistance
70 mOhms
Tradename
ISOTOP
Brand
微芯片技术
Manufacturer
Microchip
Mounting Styles
螺钉安装
操作温度
-55°C ~ 150°C (TJ)
系列
-
包装
Tube
颜色
Silver
子类别
Discrete Semiconductor Modules
技术
MOSFET (Metal Oxide)
配置
Single
通道数量
1 Channel
功率耗散
290
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
70mOhm @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
3.9V @ 1mA
输入电容(Ciss)(Max)@Vds
7015 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
259 nC @ 10 V
上升时间
30 ns
漏源电压 (Vdss)
600 V
Vgs(最大值)
±20V
产品类别
Discrete Semiconductor Modules
信道型
N
场效应管特性
-
产品
功率MOSFET模块
产品类别
Discrete Semiconductor Modules
宽度
25.4 mm
高度
9.6 mm
长度
38.2 mm
APT40N60JCU3拓展信息
Microchip Technology
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