Microchip APT44F80B2

包装/外壳

TO-247-3 Variant

安装类型

通孔

供应商器件包装

T-MAX™ [B2]

Manufacturer Part Number

ARNI-3116A-TOSH

Manufacturer

Toshiba

Package

Tube

Base Product Number

APT44F80

Current - Continuous Drain (Id) @ 25℃

47A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

1135W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

800 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

1.135 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

305 nC

Rds On - Drain-Source Resistance

210 mOhms

Id - Continuous Drain Current

47 A

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS 8™

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

210mOhm @ 24A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 2.5mA

输入电容(Ciss)(Max)@Vds

9330 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

305 nC @ 10 V

漏源电压 (Vdss)

800 V

Vgs（最大值）

±30V

场效应管特性

-