Microchip APT4M120K

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220 [K]

材料

Polyamide (PA66), Nylon 6/6, Glass Filled

Package

Bulk

Base Product Number

C146P10

厂商

Amphenol Tuchel Industrial

Product Status

活跃

Continuous Drain Current Id

5

Current - Continuous Drain (Id) @ 25℃

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

225W (Tc)

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

7.4 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

225 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Forward Transconductance - Min

4.5 S

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

43 nC

Tradename

Power MOS 8

Rds On - Drain-Source Resistance

3.12 Ohms

RoHS

Details

Typical Turn-Off Delay Time

24 ns

Id - Continuous Drain Current

5 A

操作温度

-

系列

heavy/mate®, C146 M

包装

Tube

颜色

Black

性别

Male

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

功率耗散

225

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4Ohm @ 2A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

1385 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

43 nC @ 10 V

大小

E10

上升时间

4.4 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±30V

产品类别

MOSFET

包括

-

信道型

N

场效应管特性

-

框架类型

固定框架

模块数量

3

产品类别

MOSFET

宽度

4.72 mm

高度

9.19 mm

长度

10.26 mm