Microchip APT5010LVRG

安装类型

通孔

包装/外壳

TO-264-3, TO-264AA

供应商器件包装

TO-264 [L]

Voltage, Rating

25 V

Package

Tube

Base Product Number

APT5010

Current - Continuous Drain (Id) @ 25℃

47A (Tc)

厂商

微芯片技术

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

500 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

520 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Channel Mode

Enhancement

Id - Continuous Drain Current

47 A

RoHS

Details

Rds On - Drain-Source Resistance

100 mOhms

Qg - Gate Charge

470 nC

Brand

Microchip Technology / Atmel

Manufacturer

Microchip

系列

POWER MOS V®

包装

Tube

容差

1 %

温度系数

100 ppm/°C

电阻

18 kΩ

最高工作温度

155 °C

最小工作温度

-55 °C

组成

Thin Film

子类别

MOSFETs

额定功率

63 mW

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

100mOhm @ 500mA, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 2.5mA

输入电容(Ciss)(Max)@Vds

8900 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

470 nC @ 10 V

漏源电压 (Vdss)

500 V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET

高度

350 µm