参数名
参数值
参数名
参数值
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
TO-247 [B]
Package
Tube
Base Product Number
APT5017
Current - Continuous Drain (Id) @ 25℃
30A (Tc)
厂商
微芯片技术
Product Status
活跃
Vds - Drain-Source Breakdown Voltage
500 V
Vgs th - Gate-Source Threshold Voltage
2 V
Pd - Power Dissipation
370 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
0.211644 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
通孔
Channel Mode
Enhancement
Manufacturer
Microchip
Brand
Microchip Technology / Atmel
Qg - Gate Charge
300 nC
Rds On - Drain-Source Resistance
170 mOhms
RoHS
Details
Id - Continuous Drain Current
30 A
系列
POWER MOS V®
包装
Tube
子类别
MOSFETs
技术
MOSFET (Metal Oxide)
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
170mOhm @ 500mA, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 1mA
输入电容(Ciss)(Max)@Vds
5280 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
300 nC @ 10 V
漏源电压 (Vdss)
500 V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET