Microchip APT50M80LVFRG

生命周期状态

Production (Last Updated: 2 months ago)

包装/外壳

TO-264-3

底架

通孔

Vds - Drain-Source Breakdown Voltage

500 V

Typical Turn-On Delay Time

14 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

625 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.352740 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

423 nC

Rds On - Drain-Source Resistance

80 mOhms

RoHS

Details

Typical Turn-Off Delay Time

64 ns

Id - Continuous Drain Current

58 A

Number of Elements

1

Voltage Rating (DC)

500 V

Turn Off Delay Time

64 ns

包装

Tube

最高工作温度

150 °C

最小工作温度

-55 °C

子类别

MOSFETs

最大功率耗散

500 W

技术

Si

额定电流

58 A

配置

Single

通道数量

1 Channel

功率耗散

625 W

接通延迟时间

14 ns

上升时间

25 ns

漏源电压 (Vdss)

600 V

产品类别

MOSFET

晶体管类型

1 N-Channel

连续放电电流(ID)

58 A

栅极至源极电压(Vgs)

30 V

输入电容

4.5 nF

最大rds

170 mΩ

产品类别

MOSFET

辐射硬化

无

无铅

无铅