Microchip APT8M100B

安装类型

面板安装

包装/外壳

TO-247-3

越来越多的功能

Flange

外壳材料

Aluminum

供应商器件包装

TO-247 [B]

插入材料

-

后壳材料，电镀

Metal

Voltage, Rating

-

Package

Bulk

Primary Material

Metal

Base Product Number

D38999/20WH

厂商

Amphenol Aerospace Operations

Product Status

活跃

Contact Materials

Copper Alloy

Contact Finish Mating

Gold

Continuous Drain Current Id

8

Current - Continuous Drain (Id) @ 25℃

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

290W (Tc)

Vds - Drain-Source Breakdown Voltage

1 kV

Typical Turn-On Delay Time

8.5 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

290 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Forward Transconductance - Min

7.5 S

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

60 nC

Tradename

Power MOS 8

Rds On - Drain-Source Resistance

1.53 Ohms

RoHS

Details

Typical Turn-Off Delay Time

29 ns

Id - Continuous Drain Current

8 A

操作温度

-65°C ~ 175°C

系列

Military, MIL-DTL-38999 Series III, Tri-Start™ TV

包装

Tube

终端

Crimp

连接器类型

Receptacle, Female Sockets

定位的数量

100

颜色

橄榄色

应用

Aviation, Marine, Military

紧固类型

Threaded

子类别

MOSFETs

额定电流

-

技术

MOSFET (Metal Oxide)

方向

N (Normal)

屏蔽/屏蔽

Shielded

入口保护

抗环境干扰

外壳完成

橄榄色镉

外壳尺寸-插入

23-35

配置

Single

通道数量

1 Channel

功率耗散

290

外壳尺寸，MIL

H

电缆开口

-

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.8Ohm @ 4A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

1885 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

60 nC @ 10 V

上升时间

7.8 ns

漏源电压 (Vdss)

1000 V

Vgs（最大值）

±30V

产品类别

MOSFET

场效应管特性

-

特征

Backshell, Heat Shrink, Shielding Device

产品类别

MOSFET

宽度

16.26 mm

高度

5.31 mm

长度

21.46 mm

触点表面处理厚度 - 配套

50.0µin (1.27µm)

材料可燃性等级

-