Microchip APT9M100S

安装类型

通孔

包装/外壳

3AB, 3AG, 1/4 x 1-1/4 (Axial)

供应商器件包装

D3PAK

Lead Free Status / RoHS Status

--

Approvals

CE, CSA, cULus

Voltage Rating AC

250V

Continuous Drain Current Id

9

Vds - Drain-Source Breakdown Voltage

1 kV

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

335 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.218699 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

SMD/SMT

Forward Transconductance - Min

10 S

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

80 nC

Rds On - Drain-Source Resistance

1.4 Ohms

RoHS

Details

Typical Turn-Off Delay Time

40 ns

Id - Continuous Drain Current

9 A

Package

Tube

Base Product Number

APT9M100

Current - Continuous Drain (Id) @ 25℃

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

335W (Tc)

Product Status

活跃

操作温度

-55°C ~ 125°C

系列

3SBP

包装

Bulk

尺寸/尺寸

0.272 Dia x 1.280 L (6.90mm x 32.50mm)

零件状态

活跃

颜色

--

子类别

MOSFETs

技术

Si

额定电流

63mA

配置

Single

通道数量

1 Channel

回应时间

Slow

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.4Ohm @ 5A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

保险丝类型

Cartridge, Glass

输入电容(Ciss)(Max)@Vds

2605 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

80 nC @ 10 V

上升时间

11 ns

漏源电压 (Vdss)

1000 V

Vgs（最大值）

±30V

分断能力@额定电压

200A

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET