Microchip APTM100UM45FAG

包装/外壳

SP6

安装类型

底座安装

供应商器件包装

SP6

Manufacturer Part Number

7102242

Manufacturer

Sick

Continuous Drain Current Id

215

Package

Bulk

Base Product Number

APTM100

Current - Continuous Drain (Id) @ 25℃

215A (Tc)

Vds - Drain-Source Breakdown Voltage

1 kV

Typical Turn-On Delay Time

18 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

5 kW

Id - Continuous Drain Current

215 A

Typical Turn-Off Delay Time

140 ns

RoHS

Details

Rds On - Drain-Source Resistance

45 mOhms

Tradename

POWER MOS 7

Brand

微芯片技术

Mounting Styles

螺钉安装

Factory Pack QuantityFactory Pack Quantity

1

Minimum Operating Temperature

- 40 C

Unit Weight

3.880136 oz

Vgs - Gate-Source Voltage

30 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Product Status

活跃

Power Dissipation (Max)

5000W (Tc)

厂商

微芯片技术

Drive Voltage (Max Rds On, Min Rds On)

10V

操作温度

-40°C ~ 150°C (TJ)

系列

-

包装

Tube

子类别

Discrete Semiconductor Modules

技术

MOSFET (Metal Oxide)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

52mOhm @ 107.5A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 30mA

输入电容(Ciss)(Max)@Vds

42700 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

1602 nC @ 10 V

上升时间

14 ns

漏源电压 (Vdss)

1000 V

Vgs（最大值）

±30V

产品类别

Discrete Semiconductor Modules

信道型

N

场效应管特性

-

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules

宽度

62 mm

高度

15 mm

长度

108 mm