Microchip JANSR2N7593U3

包装/外壳

U3-3

安装类型

表面贴装

供应商器件包装

U3 (SMD-0.5)

RoHS

N

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

250 V

Id - Continuous Drain Current

12.4 A

Rds On - Drain-Source Resistance

210 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

50 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

75 W

Channel Mode

Enhancement

Fall Time

30 ns

Forward Transconductance - Min

8.8 S

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

60 ns

Typical Turn-On Delay Time

18 ns

Package

Tray

Current - Continuous Drain (Id) @ 25℃

12.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V

厂商

微芯片技术

Power Dissipation (Max)

75W (Tc)

Product Status

活跃

包装

Tray

操作温度

-55°C ~ 150°C (TJ)

系列

-

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

210mOhm @ 7.8A, 12V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

门极电荷(Qg)(最大)@Vgs

50 nC @ 12 V

上升时间

30 ns

漏源电压 (Vdss)

250 V

Vgs（最大值）

±20V

晶体管类型

1 N-Channel

场效应管特性

-