参数名
参数值
参数名
参数值
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
TO-247-3
Continuous Drain Current Id
77
Package
Tube
Base Product Number
MSC035
Current - Continuous Drain (Id) @ 25℃
77A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
厂商
微芯片技术
Power Dissipation (Max)
283W (Tc)
Product Status
活跃
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.7V @ 2mA
Id - Continuous Drain Current
77 A
RoHS
Details
Rds On - Drain-Source Resistance
44 mOhms
Qg - Gate Charge
99 nC
Brand
Microchip Technology / Atmel
Manufacturer
Microchip
Channel Mode
Enhancement
Mounting Styles
通孔
Factory Pack QuantityFactory Pack Quantity
1
Minimum Operating Temperature
- 55 C
Unit Weight
0.211644 oz
Vgs - Gate-Source Voltage
- 10 V, + 23 V
Maximum Operating Temperature
+ 175 C
Transistor Polarity
N-Channel
Pd - Power Dissipation
283 W
Vgs th - Gate-Source Threshold Voltage
1.9 V
Vds - Drain-Source Breakdown Voltage
700 V
操作温度
-55°C ~ 175°C (TJ)
系列
-
包装
Tube
零件状态
Production (Last Updated: 9 months ago)
子类别
MOSFETs
技术
SiCFET (Silicon Carbide)
配置
Single
通道数量
1 Channel
功率耗散
283
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
44mOhm @ 30A, 20V
输入电容(Ciss)(Max)@Vds
2010 pF @ 700 V
门极电荷(Qg)(最大)@Vgs
99 nC @ 20 V
漏源电压 (Vdss)
700 V
Vgs(最大值)
+25V, -10V
产品类别
MOSFET
信道型
N通道
场效应管特性
-
产品类别
MOSFET