参数名
参数值
参数名
参数值
生命周期状态
Production (Last Updated: 9 months ago)
安装类型
表面贴装
包装/外壳
6-UFDFN Exposed Pad
供应商器件包装
6-USPC (1.8x2)
Package
Tape & Reel (TR)
Base Product Number
XC6123
厂商
Torex Semiconductor Ltd
Product Status
活跃
Continuous Drain Current Id
39
Current - Continuous Drain (Id) @ 25℃
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Power Dissipation (Max)
143W (Tc)
Vds - Drain-Source Breakdown Voltage
700 V
Vgs th - Gate-Source Threshold Voltage
1.9 V
Pd - Power Dissipation
143 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 10 V, + 23 V
Unit Weight
0.211644 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
通孔
Channel Mode
Enhancement
Manufacturer
Microchip
Brand
Microchip Technology / Atmel
Qg - Gate Charge
56 nC
Rds On - Drain-Source Resistance
69 mOhms
RoHS
Details
Id - Continuous Drain Current
39 A
操作温度
-40°C ~ 85°C (TA)
系列
-
包装
Tube
类型
看门狗电路
子类别
MOSFETs
技术
SiCFET (Silicon Carbide)
输出量
开路漏极或开路集电极
配置
Single
通道数量
1 Channel
功率耗散
143
重置
低电平有效
电压 - 阈值
4.9V
监测的电压数量
1
场效应管类型
N-Channel
重置超时
200ms Typical
Rds On(Max)@Id,Vgs
75mOhm @ 20A, 20V
不同 Id 时 Vgs(th)(最大值)
2.4V @ 1mA
输入电容(Ciss)(Max)@Vds
1175 pF @ 700 V
门极电荷(Qg)(最大)@Vgs
56 nC @ 20 V
漏源电压 (Vdss)
700 V
Vgs(最大值)
+23V, -10V
产品类别
MOSFET
场效应管特性
-
产品类别
MOSFET