Microchip Technology APT10M19BVRG

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

TO-247 [B]

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

100 V

Id - Continuous Drain Current

75 A

Rds On - Drain-Source Resistance

19 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qg - Gate Charge

300 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

370 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

1

Unit Weight

0.211644 oz

Continuous Drain Current Id

75

Package

Tube

Base Product Number

APT10M19

Current - Continuous Drain (Id) @ 25℃

75A (Tc)

厂商

微芯片技术

Product Status

活跃

包装

Tube

系列

POWER MOS V®

配置

Single

通道数量

1 Channel

功率耗散

370

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

19mOhm @ 500mA, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

6120 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

300 nC @ 10 V

漏源电压 (Vdss)

100 V

信道型

N

场效应管特性

-