Microchip Technology APT1201R4BLLG

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247-3

厂商

微芯片技术

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5V @ 1mA

Power Dissipation (Max)

300W (Tc)

Base Product Number

APT1201

Continuous Drain Current Id

9

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

8 ns

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

300 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.211644 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Microchip

Brand

Microchip Technology / Atmel

Qg - Gate Charge

75 nC

Rds On - Drain-Source Resistance

1.5 Ohms

RoHS

Details

Typical Turn-Off Delay Time

27 ns

Id - Continuous Drain Current

9 A

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

300

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.4Ohm @ 4.5A, 10V

输入电容(Ciss)(Max)@Vds

2500 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

120 nC @ 10 V

上升时间

5 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET