Microchip Technology APT1201R6SVFRG

包装/外壳

D3PAK-3

安装类型

表面贴装

供应商器件包装

D3 [S]

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

1.2 kV

Id - Continuous Drain Current

8 A

Rds On - Drain-Source Resistance

1.6 Ohms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qg - Gate Charge

230 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

280 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

1

Unit Weight

0.218699 oz

Continuous Drain Current Id

8

Package

Tube

Base Product Number

APT1201

Current - Continuous Drain (Id) @ 25℃

8A (Tc)

厂商

微芯片技术

Product Status

活跃

包装

Tube

系列

POWER MOS V®

配置

Single

通道数量

1 Channel

功率耗散

280

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.6Ohm @ 4A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

3660 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

230 nC @ 10 V

漏源电压 (Vdss)

1200 V

信道型

N

场效应管特性

-