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内地含税价
1
¥31.354061
10
¥29.579299
100
¥27.905004
500
¥26.325475
1000
¥24.835353
Microchip Technology APT30GN60BDQ2G
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APT30GN60BDQ2G
1610-APT30GN60BDQ2G
晶体管 - IGBT - 单个
TO-247-3
大陆
立即发货

IGBT Transistors FG, IGBT, 600V, TO-247, RoHSView in Development Tools Selector
--最小包装量--
¥
总价: ¥
APT30GN60BDQ2G详情
Microchip Technology APT30GN60BDQ2G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
TO-247 [B]
RoHS
Details
Mounting Styles
通孔
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
- 30 V, + 30 V
Continuous Collector Current at 25 C
63 A
Pd - Power Dissipation
203 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Factory Pack QuantityFactory Pack Quantity
1
Unit Weight
0.208116 oz
Package
Tube
Current-Collector (Ic) (Max)
63 A
Base Product Number
APT30GN60
厂商
微芯片技术
Product Status
活跃
Test Conditions
400V, 30A, 4.3Ohm, 15V
包装
Tube
操作温度
-55°C ~ 175°C (TJ)
系列
-
配置
Single
功率耗散
203
输入类型
Standard
功率 - 最大
203 W
电压 - 集射极击穿(最大值)
600 V
不同 Vge、Ic 时 Vce(on)(最大值)
1.9V @ 15V, 30A
连续集电极电流
63
IGBT类型
沟渠现场停车
闸门收费
165 nC
集极脉冲电流(Icm)
90 A
Td(开/关)@25°C
12ns/155ns
开关能量
525µJ (on), 700µJ (off)
APT30GN60BDQ2G拓展信息
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