Microchip Technology APT30M70BVFRG

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

TO-247 [B]

Unit Weight

0.211644 oz

Factory Pack QuantityFactory Pack Quantity

1

Channel Mode

Enhancement

Pd - Power Dissipation

370 W

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Qg - Gate Charge

225 nC

Vgs th - Gate-Source Threshold Voltage

2 V

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Rds On - Drain-Source Resistance

70 mOhms

Id - Continuous Drain Current

48 A

Vds - Drain-Source Breakdown Voltage

300 V

Transistor Polarity

N-Channel

Mounting Styles

通孔

RoHS

Details

Package

Tube

Base Product Number

APT30M70

Current - Continuous Drain (Id) @ 25℃

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

370W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 1mA

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS V®

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

70mOhm @ 500mA, 10V

输入电容(Ciss)(Max)@Vds

5870 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

225 nC @ 10 V

漏源电压 (Vdss)

300 V

Vgs（最大值）

±30V

场效应管特性

-