Microchip Technology APT35GN120BG
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APT35GN120BG
1610-APT35GN120BG
晶体管 - IGBT - 单个
TO-247-3
大陆
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IGBT Transistors FG, IGBT, 1200V, TO-247, RoHSView in Development Tools Selector
1最小包装量--
APT35GN120BG详情
Microchip Technology APT35GN120BG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
安装类型
通孔
供应商器件包装
TO-247 [B]
RoHS
Details
Mounting Styles
通孔
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
- 30 V, + 30 V
Continuous Collector Current at 25 C
94 A
Pd - Power Dissipation
379 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
94 A
Gate-Emitter Leakage Current
600 nA
Factory Pack QuantityFactory Pack Quantity
1
Unit Weight
1.340411 oz
Package
Tube
Current-Collector (Ic) (Max)
94 A
Base Product Number
APT35GN120
厂商
微芯片技术
Product Status
活跃
Test Conditions
800V, 35A, 2.2Ohm, 15V
包装
Tube
操作温度
-55°C ~ 150°C (TJ)
系列
-
配置
Single
功率耗散
379
输入类型
Standard
功率 - 最大
379 W
工作温度范围
- 55 C to + 150 C
电压 - 集射极击穿(最大值)
1200 V
不同 Vge、Ic 时 Vce(on)(最大值)
2.1V @ 15V, 35A
连续集电极电流
94 A
IGBT类型
NPT, Trench Field Stop
闸门收费
220 nC
集极脉冲电流(Icm)
105 A
Td(开/关)@25°C
24ns/300ns
开关能量
2.315mJ (off)
高度
5.31 mm
长度
21.46 mm
宽度
16.26 mm
APT35GN120BG拓展信息
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