Microchip Technology APT38F80B2

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

T-MAX™ [B2]

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

800 V

Id - Continuous Drain Current

41 A

Rds On - Drain-Source Resistance

190 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

2.5 V

Qg - Gate Charge

260 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

1.04 kW

Channel Mode

Enhancement

Fall Time

60 ns

Forward Transconductance - Min

38 S

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

200 ns

Typical Turn-On Delay Time

46 ns

Unit Weight

0.211644 oz

Continuous Drain Current Id

41

Package

Tube

Base Product Number

APT38F80

Current - Continuous Drain (Id) @ 25℃

41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

1040W (Tc)

Product Status

活跃

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

POWER MOS 8™

配置

Single

通道数量

1 Channel

功率耗散

1.04

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

240mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 2.5mA

输入电容(Ciss)(Max)@Vds

8070 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

260 nC @ 10 V

上升时间

65 ns

漏源电压 (Vdss)

800 V

Vgs（最大值）

±30V

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-