APT40GR120B2SCD10
APT40GR120B2SCD10

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Microchip Technology APT40GR120B2SCD10

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型号

APT40GR120B2SCD10

utmel 编号

1610-APT40GR120B2SCD10

商品类别

晶体管 - IGBT - 单个

封装

--

交货地

大陆

交期(工作日)

立即发货

ROHS

ECAD

简介

IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8

起订量

1最小包装量--

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APT40GR120B2SCD10
APT40GR120B2SCD10 Microchip Technology IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8

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APT40GR120B2SCD10详情

Microchip Technology APT40GR120B2SCD10重要参数规格及、参数值,及相似型号如下:

  • 参数名
    参数值
    全选
  • 参数名
    参数值
    全选
  • RoHS

    Details

  • Mounting Styles

    通孔

  • Collector- Emitter Voltage VCEO Max

    1.2 kV

  • Collector-Emitter Saturation Voltage

    3.5 V

  • Unit Weight

    0.218699 oz

  • Factory Pack QuantityFactory Pack Quantity

    1

  • Maximum Operating Temperature

    + 150 C

  • Minimum Operating Temperature

    - 55 C

  • Pd - Power Dissipation

    500 W

  • Continuous Collector Current at 25 C

    88 A

  • Maximum Gate Emitter Voltage

    - 30 V, + 30 V

  • Rohs Code

  • Manufacturer Part Number

    APT40GR120B2SCD10

  • Part Life Cycle Code

    Obsolete

  • Ihs Manufacturer

    MICROSEMI CORP

  • Risk Rank

    5.65

  • 包装

    Tube

  • ECCN 代码

    EAR99

  • Reach合规守则

    compliant

  • 配置

    Single

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