Microchip Technology APT40GR120B2SCD10
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APT40GR120B2SCD10
1610-APT40GR120B2SCD10
晶体管 - IGBT - 单个
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IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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APT40GR120B2SCD10详情
Microchip Technology APT40GR120B2SCD10重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
Details
Mounting Styles
通孔
Collector- Emitter Voltage VCEO Max
1.2 kV
Collector-Emitter Saturation Voltage
3.5 V
Unit Weight
0.218699 oz
Factory Pack QuantityFactory Pack Quantity
1
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Pd - Power Dissipation
500 W
Continuous Collector Current at 25 C
88 A
Maximum Gate Emitter Voltage
- 30 V, + 30 V
Rohs Code
有
Manufacturer Part Number
APT40GR120B2SCD10
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICROSEMI CORP
Risk Rank
5.65
包装
Tube
ECCN 代码
EAR99
Reach合规守则
compliant
配置
Single
APT40GR120B2SCD10拓展信息
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