Microchip Technology APT45GR65B2DU30
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APT45GR65B2DU30
1610-APT45GR65B2DU30
晶体管 - IGBT - 单个
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IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
1最小包装量--
APT45GR65B2DU30详情
Microchip Technology APT45GR65B2DU30重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
底架
通孔
RoHS
Details
Mounting Styles
通孔
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
2.6 V
Maximum Gate Emitter Voltage
- 30 V, + 30 V
Continuous Collector Current at 25 C
118 A
Pd - Power Dissipation
543 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Factory Pack QuantityFactory Pack Quantity
1
Collector-Emitter Breakdown Voltage
650 V
包装
Tube
最大功率耗散
543 W
配置
Single
集电极发射器电压(VCEO)
2.4 V
最大集电极电流
118 A
反向恢复时间
80 ns
APT45GR65B2DU30拓展信息
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